Mutual passivation of donors and isovalent nitrogen in GaAs

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	Mutual passivation of donors and isovalent nitrogen in GaAs
	Li J ; Carrier P ; Wei SH ; Li SS ; Xia JB
刊名	physical review letters
	2006
卷号	96 期号:3 页码:art.no.035505
关键词	DILUTED GANXAS1-X ALLOYS GROUP-IV DONORS SEMICONDUCTOR ALLOYS OPTICAL-PROPERTIES BAND GAN(X)AS1-X IMPURITIES HYDROGEN
ISSN号	0031-9007
通讯作者	li, j, natl renewable energy lab, golden, co 80401 usa.
中文摘要	we study the mutual passivation of shallow donor and isovalent n in gaas. we find that all the donor impurities, si-ga, ge-ga, s-as, and se-as, bind to n in gaasn, which has a large n-induced band-gap reduction relative to gaas. for a group-iv impurity such as si, the formation of the nearest-neighbor si-ga-n-as defect complex creates a deep donor level below the conduction band minimum (cbm). the coupling between this defect level with the cbm pushes the cbm upwards, thus restoring the gaas band gap; the lowering of the defect level relative to the isolated si-ga shallow donor level is responsible for the increased electrical resistivity. therefore, si and n mutually passivate each other's electrical and optical activities in gaas. for a group-vi shallow donor such as s, the binding between s-as and n-as does not form a direct bond; therefore, no mutual passivation exists in the gaas(s+n) system.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10870]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li J,Carrier P,Wei SH,et al. Mutual passivation of donors and isovalent nitrogen in GaAs[J]. physical review letters,2006,96(3):art.no.035505.
APA	Li J,Carrier P,Wei SH,Li SS,&Xia JB.(2006).Mutual passivation of donors and isovalent nitrogen in GaAs.physical review letters,96(3),art.no.035505.
MLA	Li J,et al."Mutual passivation of donors and isovalent nitrogen in GaAs".physical review letters 96.3(2006):art.no.035505.