Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots

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	Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots
	Kong LM ; Cai JF ; Wu ZY ; Gong Z ; Niu ZC ; Feng ZC
刊名	thin solid films
	2006
卷号	498 期号:1-2 页码:188-192
关键词	time-resolved photoluminescence InAs self-assembled QDs migration of carriers 1.3 MU-M DEPENDENT RADIATIVE DECAY THERMAL REDISTRIBUTION EXCITONS RECOMBINATION RELAXATION LIFETIMES EMISSION EPITAXY LASERS
ISSN号	0040-6090
通讯作者	feng, zc, natl taiwan univ, grad inst electroopt engn, taipei, taiwan. e-mail: zcfeng@cc.ee.nut.edu.tw
中文摘要	two types of inas self-assembled quantum dots (qds) were prepared by molecular beam epitaxy. atomic force microscopy (afm) measurements showed that, compared to qds grown on gaas substrate, qds grown on ingaas layer has a significantly enhanced density. the short spacing (several nanometer) among qds stimulates strong coupling and leads to a large red-shift of the 1.3 mu m photoluminescence (pl) peak. we study systematically the dependence of pl lifetime on the qds size, density and temperature (1). we found that, below 50 k, the pl lifetime is insensitive to temperature, which is interpreted from the localization effects. as t increases, the pl lifetime increases, which can be explained from the competition between the carrier redistribution and thermal emission at higher temperature. the increase of carriers in qds migrated from barriers and wetting layer (wl), and the redistribution of carriers among qds enhance the pl lifetime as t increases. the thermal emission and non-radiative recombination have effects to reduce the pl lifetime at higher t. as a result, the radiative recombination lifetime is determined by the wave function overlapping of electrons and holes in qds, and qds with different densities have different pl lifetime dependence on the qds size. (c) 2005 elsevier b.v. all rights reserved.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10842]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Kong LM,Cai JF,Wu ZY,et al. Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots[J]. thin solid films,2006,498(1-2):188-192.
APA	Kong LM,Cai JF,Wu ZY,Gong Z,Niu ZC,&Feng ZC.(2006).Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots.thin solid films,498(1-2),188-192.
MLA	Kong LM,et al."Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots".thin solid films 498.1-2(2006):188-192.