Magnetism and luminescence evolution due to nitrogen doping in manganese-gallium oxide nanowires
Song YP ; Wang PW ; Zhang XH ; Xu J ; Li GH ; Yu DP
刊名physics letters a
2006
卷号351期号:4-5页码:302-307
关键词diluted magnetic semiconductor nanowire photoluminescence cathodolumonesence CATALYTIC SYNTHESIS GAN PHOTOLUMINESCENCE HETEROSTRUCTURES PHOSPHORS
ISSN号0375-9601
通讯作者yu, dp, peking univ, electron microscopy lab, dept phys, beijing 100871, peoples r china. e-mail: yudp@pku.edu.cn
中文摘要we report a new method for large-scale production of gamnn nanowires, by annealing manganese-gallium oxide nanowires in flowing ammonia at high temperature. microstructure analysis indicates that the gamnn nanowires have wurtzite gan structure without mn precipitates or mn-related second phases. magnetism evolution due to nitrogen doping in manganese-gallium oxide nanowires was evaluated by magnetic measurements. magnetic measurement reveals that the magnetization increases with the increase of nitrogen concentration. ferromagnetic ordering exists in the gamnn nanowires, whose curie temperature is above room temperature. luminescence evolution was investigated by the cathodoluminesence measurement for a single nanowire and photoluminescence measurement in a temperature range between 10 and 300 k. experimental results indicate that optical properties can be modulated by nitrogen doping in manganese-gallium oxide nanowires. (c) 2005 elsevier b.v. all rights reserved.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-04-11
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/10782]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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GB/T 7714
Song YP,Wang PW,Zhang XH,et al. Magnetism and luminescence evolution due to nitrogen doping in manganese-gallium oxide nanowires[J]. physics letters a,2006,351(4-5):302-307.
APA Song YP,Wang PW,Zhang XH,Xu J,Li GH,&Yu DP.(2006).Magnetism and luminescence evolution due to nitrogen doping in manganese-gallium oxide nanowires.physics letters a,351(4-5),302-307.
MLA Song YP,et al."Magnetism and luminescence evolution due to nitrogen doping in manganese-gallium oxide nanowires".physics letters a 351.4-5(2006):302-307.
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