Influence of the cavity on the low-temperature photoluminescence of SiGe/Si multiquantum wells grown on a silicon-on-insulator substrate

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	Influence of the cavity on the low-temperature photoluminescence of SiGe/Si multiquantum wells grown on a silicon-on-insulator substrate
	Li CB ; Cheng BW ; Zuo YH ; Morrison AP ; Yu JZ ; Wang QM
刊名	applied physics letters
	2006
卷号	88 期号:12 页码:art.no.121901
关键词	SI-GE ALLOYS MULTILAYER STRUCTURE ROOM-TEMPERATURE QUANTUM-WELLS BAND-EDGE HETEROSTRUCTURES ISLANDS
ISSN号	0003-6951
通讯作者	li, cb, univ coll cork, dept elect & elect engn, coll rd, cork, ireland. e-mail: cbli1104@yahoo.com.cn
中文摘要	the influences of the cavity on the low-temperature photoluminescence of si0.59ge0.41/si multiquantum wells grown on silicon-on-insulator substrates are discussed. the positions of the modulated photoluminescence (pl) peaks not only relate to the nature of sige/si multiquantum wells, but also relate to the characteristic of the cavity. with increasing temperature, a redshift of the modulated pl peak originating from the thermo-optical effect of the cavity is observed.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10770]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li CB,Cheng BW,Zuo YH,et al. Influence of the cavity on the low-temperature photoluminescence of SiGe/Si multiquantum wells grown on a silicon-on-insulator substrate[J]. applied physics letters,2006,88(12):art.no.121901.
APA	Li CB,Cheng BW,Zuo YH,Morrison AP,Yu JZ,&Wang QM.(2006).Influence of the cavity on the low-temperature photoluminescence of SiGe/Si multiquantum wells grown on a silicon-on-insulator substrate.applied physics letters,88(12),art.no.121901.
MLA	Li CB,et al."Influence of the cavity on the low-temperature photoluminescence of SiGe/Si multiquantum wells grown on a silicon-on-insulator substrate".applied physics letters 88.12(2006):art.no.121901.