High-precision determination of lattice constants and structural characterization of InN thin films

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	High-precision determination of lattice constants and structural characterization of InN thin films
	Wu MF ; Zhou SQ ; Vantomme A ; Huang Y ; Wang H ; Yang H
刊名	journal of vacuum science & technology a
	2006
卷号	24 期号:2 页码:275-279
关键词	X-RAY-DIFFRACTION BAND-GAP EPITAXIAL LAYERS INDIUM NITRIDE HEXAGONAL INN CUBIC INN GROWTH PARAMETERS INGAN PHASE
ISSN号	0734-2101
通讯作者	wu, mf, peking univ, dept tech phys, sch phys, beijing 100871, peoples r china. e-mail: mfwu@publica.bj.cninfo.net
中文摘要	x-ray diffraction and rutherford backscattering/channeling were used to characterize the crystalline quality of an inn layer grown on al2o3(0001) using metal-organic chemical-vapor deposition. a full width at half maximum of 0.27 degrees from an inn(0002) omega scan and a minimum yield of 23% from channeling measurements show that this 480-nm-thick inn layer grown at low temperature (450 degrees c) has a relatively good crystalline quality. high-resolution x-ray diffraction indicates that the inn layer contains a small fraction of cubic inn, besides the predominant hexagonal phase. from this inn sample, the lattice constants a=0.353 76 nm and c=0.570 64 nm for the hexagonal inn and a=0.4986 nm for the cubic inn were determined independently. 2 theta/omega-chi mapping and a pole figure measurement revealed that the crystallographic relationship among the cubic inn, the hexagonal inn, and the substrate is: inn[111]parallel to inn[0001]parallel to al2o3[0001] and inn{110}parallel to inn{1120}parallel to al2o3{1010}, and that the cubic inn is twinned. photoluminescence measurements indicate that the band-gap energy of this sample is approximately 0.82 ev. (c) 2006 american vacuum society.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10764]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wu MF,Zhou SQ,Vantomme A,et al. High-precision determination of lattice constants and structural characterization of InN thin films[J]. journal of vacuum science & technology a,2006,24(2):275-279.
APA	Wu MF,Zhou SQ,Vantomme A,Huang Y,Wang H,&Yang H.(2006).High-precision determination of lattice constants and structural characterization of InN thin films.journal of vacuum science & technology a,24(2),275-279.
MLA	Wu MF,et al."High-precision determination of lattice constants and structural characterization of InN thin films".journal of vacuum science & technology a 24.2(2006):275-279.