High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure MOCVD

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	High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure MOCVD
	Pan JQ
刊名	optical materials
	2006
卷号	28 期号:8-9 页码:1037-1040
关键词	selective-area growth ultra-low-pressure metal-organic chemical vapor deposition tapered mask photoluminescence BANDGAP ENERGY CONTROL INTEGRATED DFB LASER EPITAXY
ISSN号	0925-3467
通讯作者	zhao, q, chinese acad sci, inst semicond, natl ctr optoelect technol, pob 912, beijing 100083, peoples r china. e-mail: qzhao@red.semi.ac.cn
中文摘要	an ingaasp/ingaasp multiple quantum wells (mqws) selectively grown by ultra-low-pressure (22 mbar) metal-organic chemical vapor deposition was investigated in this article. a 46 nm photoluminescence peak wavelength shift was obtained with a small mask width variation (15-30 mu m). high-quality crystal layers with a photoluminescence (pl) ftill-width-at-half-maximum (fwhm) of less than 30 mev were achieved. using novel tapered masks, the transition-effect of the tapered region was also studied. the energy detuning of the tapered region was observed to be saturated with the larger ratio of the mask width divided to the tapered region length. (c) 2005 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10652]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Pan JQ. High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure MOCVD[J]. optical materials,2006,28(8-9):1037-1040.
APA	Pan JQ.(2006).High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure MOCVD.optical materials,28(8-9),1037-1040.
MLA	Pan JQ."High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure MOCVD".optical materials 28.8-9(2006):1037-1040.