Evolution of the amount of InAs in wetting layers in an InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy

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	Evolution of the amount of InAs in wetting layers in an InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy
	Jin P; Ye XL
刊名	nanotechnology
	2006
卷号	17 期号:9 页码:2207-2211
关键词	SCANNING-TUNNELING-MICROSCOPY ANISOTROPY SPECTROSCOPY GROWTH GAAS SURFACES ALAS
ISSN号	0957-4484
通讯作者	chen, yh, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: yhchen@red.semi.ac.cn
中文摘要	the wetting layer (wl) in inas/gaas quantum-dot systems has been studied by reflectance difference spectroscopy (rds). two structures related to the heavy-hole (hh) and light-hole (lh) related transitions in the wl have been observed. on the basis of a calculation model that takes into account the segregation effect and exciton binding energies, the amount of inas in the wl (t(wl)) and its segregation coefficient ( r) have been determined from the hh and lh transition energies. the evolutions of twl and r exhibit a close relation to the growth modes. before the formation of inas dots, t(wl) increases linearly from similar to 1 to similar to 1.6 monolayer (ml), while r increases almost linearly from similar to 0.8 to similar to 0.85. after the onset of dot formation, t(wl) is saturated at similar to 1.6 ml and r decreases slightly from 0.85 to 0.825. the variation of twl can be interpreted by using an equilibrium model. different variations of in-plane optical anisotropy before and after dot formation have been observed.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10598]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jin P,Ye XL. Evolution of the amount of InAs in wetting layers in an InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy[J]. nanotechnology,2006,17(9):2207-2211.
APA	Jin P,&Ye XL.(2006).Evolution of the amount of InAs in wetting layers in an InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy.nanotechnology,17(9),2207-2211.
MLA	Jin P,et al."Evolution of the amount of InAs in wetting layers in an InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy".nanotechnology 17.9(2006):2207-2211.