Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE
	Feng W (Feng W.) ; Pan JQ (Pan J. Q.) ; Zhou F (Zhou F.) ; Yang H (Yang H.) ; Zhao LJ (Zhao L. J.) ; Zhu HL (Zhu H. L.) ; Wang W (Wang W.)
刊名	semiconductor science and technology
	2006
卷号	21 期号:7 页码:841-845
关键词	VAPOR-PHASE EPITAXY BURIED-HETEROSTRUCTURE LASERS QUANTUM-WELL STRUCTURES BANDGAP ENERGY CONTROL LAYERS INGAASP
ISSN号	0268-1242
通讯作者	feng, w, chinese acad sci, state key lab integrated optoelect, inst semicond, pob 912, beijing 100080, peoples r china. e-mail: wfeng@semi.ac.cn
中文摘要	narrow stripe selective growth of oxide-free ingaalas/ingaalas multiple quantum wells (mqws) has been successfully performed on patterned inp substrates by ultra-low pressure movpe. flat and clear interfaces were obtained for the narrow stripe selectively grown mqws under optimized growth conditions. these selectively grown mqws were covered by specific inp layers, which can keep the mqws from being oxidized during the fabrication of the devices. the characteristics of selectively grown mqws were strongly dependent on the mask stripe width. in particular, a pl peak wavelength shift of 73 nm, a pl intensity of more than 57% and a pl fwhm of less than 102 mev were observed simultaneously with a small mask stripe width varying from 0 to 40 mu m. the results were explained by considering the migration effect from the masked region (mmr) and the lateral vapour diffusion effect (lvd).
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10526]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Feng W ,Pan JQ ,Zhou F ,et al. Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE[J]. semiconductor science and technology,2006,21(7):841-845.
APA	Feng W .,Pan JQ .,Zhou F .,Yang H .,Zhao LJ .,...&Wang W .(2006).Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE.semiconductor science and technology,21(7),841-845.
MLA	Feng W ,et al."Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE".semiconductor science and technology 21.7(2006):841-845.