Diode-end-pumped passively CW mode-locked Nd : YLF laser by the LT-In0.25Ga0.75As absorber

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Diode-end-pumped passively CW mode-locked Nd : YLF laser by the LT-In0.25Ga0.75As absorber
	Pan SD (Pan Shu-Di) ; He JL (He Jing-Liang) ; Hou YE (Hou Yu-E) ; Fan YX (Fan Ya-Xian) ; Wang HT (Wang Hui-Tian) ; Wang YG (Wang Yong-Gang) ; Ma XY (Ma Xiao-Yu)
刊名	ieee journal of quantum electronics
	2006
卷号	42 期号:9-10 页码:1097-1100
关键词	diode-pumped lasers mode-locked lasers neodymium-solid-state lasers semiconductor absorber SATURABLE BRAGG REFLECTOR SOLID-STATE LASERS ND-YVO4 LASER MIRRORS
ISSN号	0018-9197
通讯作者	pan, sd, shandong normal univ, coll phys & elect, jinan 250014, peoples r china. e-mail: jlhe@icm.sdu.edu.cn ; htwang@nju.edu.cn ; wygxjw@red.semi.ac.cn
中文摘要	we have demonstrated a self-staring passively continuous-wave mode-locked diode end-pumped nd:ylf laser with a semiconductor saturable absorber mirror of single-quantum-well (in0.25ga0.75as) grown by metal-organic chemical-vapor deposition technique at low temperature. the saturable absorber was used as nonlinear absorber and output coupler simultaneously. stable pulse duration of 3 ps has been achieved at the repetition rate of 98 mhz. the average output power was 530 mw at 1053 nm under the incident pump power of 10 w, corresponding to the peak power of 1.8 kw and pulse energy of 5.4 nj.
学科主题	半导体器件
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10376]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Pan SD ,He JL ,Hou YE ,et al. Diode-end-pumped passively CW mode-locked Nd : YLF laser by the LT-In0.25Ga0.75As absorber[J]. ieee journal of quantum electronics,2006,42(9-10):1097-1100.
APA	Pan SD .,He JL .,Hou YE .,Fan YX .,Wang HT .,...&Ma XY .(2006).Diode-end-pumped passively CW mode-locked Nd : YLF laser by the LT-In0.25Ga0.75As absorber.ieee journal of quantum electronics,42(9-10),1097-1100.
MLA	Pan SD ,et al."Diode-end-pumped passively CW mode-locked Nd : YLF laser by the LT-In0.25Ga0.75As absorber".ieee journal of quantum electronics 42.9-10(2006):1097-1100.