Electronic structure of ZnO wurtzite quantum wires

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	Electronic structure of ZnO wurtzite quantum wires
	Xia JB (Xia J. B.) ; Zhanga XW (Zhang X. W.)
刊名	european physical journal b
	2006
卷号	49 期号:4 页码:415-420
关键词	LOW-TEMPERATURE GROWTH BINDING-ENERGIES NANOWIRE ARRAYS PHOTOLUMINESCENCE PHOTODETECTORS SPECTROSCOPY SAPPHIRE CRYSTAL GAN
ISSN号	1434-6028
通讯作者	xia, jb, ccast, world lab, pob 8730, beijing 100080, peoples r china. e-mail: zhxw99@semi.ac.cn
中文摘要	the electronic structure and optical properties of zno wurtzite quantum wires with radius r >= 3 nm are studied in the framework of six-band effective-mass envelope function theory. the hole effective-mass parameters of zno wurtzite material are calculated by the empirical pseudopotential method. it is found that the electron states are either two-fold or four-fold degenerate. there is a dark exciton effect when the radius r of the zno quantum wires is in the range of [3,19.1] nm (dark range in our model). the dark ranges of other wurtzite semiconductor quantum wires are calculated for comparison. the dark range becomes smaller when the \|delta(so)\| is larger, which also happens in the quantum-dot systems. the linear polarization factor of zno quantum wires is larger when the temperature is higher.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10262]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xia JB ,Zhanga XW . Electronic structure of ZnO wurtzite quantum wires[J]. european physical journal b,2006,49(4):415-420.
APA	Xia JB ,&Zhanga XW .(2006).Electronic structure of ZnO wurtzite quantum wires.european physical journal b,49(4),415-420.
MLA	Xia JB ,et al."Electronic structure of ZnO wurtzite quantum wires".european physical journal b 49.4(2006):415-420.