The strain distributions and carrier's confining potentials of self-organized InAs/GaAs quantum dot
Liu YM (Liu Yumin) ; Yu ZY (Yu Zhongyuan) ; Huang YZ (Huang Yongzhen)
刊名international journal of modern physics b
2006
卷号20期号:29页码:4899-4907
关键词quantum dot
ISSN号issn: 0217-9792
通讯作者liu, ym, beijing univ posts & telecommun, sch sci, beijing 100876, peoples r china.
中文摘要on the basis of the finite element approach, we systematically investigated the strain field distribution of conical-shaped inas/gaas self-organized quantum dot using the two-dimensional axis-symmetric model. the normal strain, the hydrostatic strain and the biaxial strain components along the center axis path of the quantum dots are analyzed. the dependence of these strain components on volume, height-over-base ratio and cap layer (covered by cap layer or uncovered quantum dot) is investigated for the quantum grown on the (001) substrate. the dependence of the carriers' confining potentials on the three circumstances discussed above is also calculated in the framework of eight-band k (.) p theory. the numerical results are in good agreement with the experimental data of published literature.
学科主题光电子学
收录类别SCI
语种英语
公开日期2010-03-29
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/9754]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Liu YM ,Yu ZY ,Huang YZ . The strain distributions and carrier's confining potentials of self-organized InAs/GaAs quantum dot[J]. international journal of modern physics b,2006,20(29):4899-4907.
APA Liu YM ,Yu ZY ,&Huang YZ .(2006).The strain distributions and carrier's confining potentials of self-organized InAs/GaAs quantum dot.international journal of modern physics b,20(29),4899-4907.
MLA Liu YM ,et al."The strain distributions and carrier's confining potentials of self-organized InAs/GaAs quantum dot".international journal of modern physics b 20.29(2006):4899-4907.
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