Rapid photoluminescence quenching in GaInNAs quantum wells at low temperature

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	Rapid photoluminescence quenching in GaInNAs quantum wells at low temperature
	Sun, Z (Sun, Z.) ; Yang, XD (Yang, X. D.) ; Sun, BQ (Sun, B. Q.) ; Ji, Y (Ji, Y.) ; Zhang, SY (Zhang, S. Y.) ; Ni, HQ (Ni, H. Q.) ; Niu, ZC (Niu, Z. C.) ; Xu, ZY (Xu, Z. Y.)
刊名	journal of luminescence
	2007
卷号	122 sp.iss.si 期号:0 页码:188-190
关键词	GaInNAs/GaAs
ISSN号	issn: 0022-2313
通讯作者	sun, z, chinese acad sci, inst semicond, state key lab superlatt & microstruct, beijing 100083, peoples r china. 电子邮箱地址: sz3288@red.semi.ac.cn ; ji_ym@mail.sic.ac.cn ; zyxu@red.semi.ac.cn
中文摘要	temperature dependence of optical properties of gainnas/gaas quantum wells (qws) has been studied by photoluminescence (pl) and time-resolved pl. a rapid pl quenching is observed even at very low temperature and is of the excitation power dependence. these results strongly suggest that the non-radiative recombination process plays a very important role at low temperature. in the trpl measurement the shape of the pl decay curve shows significant difference under different excitation powers. it is attributed to the different involvement of non-radiative recombination in the overall recombination process. the trpl data are well fitted with the rate equation involving both the radiative and non-radiative recombination. (c) 2006 elsevier b.v. all rights reserved.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9742]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Sun, Z ,Yang, XD ,Sun, BQ ,et al. Rapid photoluminescence quenching in GaInNAs quantum wells at low temperature[J]. journal of luminescence,2007,122 sp.iss.si(0):188-190.
APA	Sun, Z .,Yang, XD .,Sun, BQ .,Ji, Y .,Zhang, SY .,...&Xu, ZY .(2007).Rapid photoluminescence quenching in GaInNAs quantum wells at low temperature.journal of luminescence,122 sp.iss.si(0),188-190.
MLA	Sun, Z ,et al."Rapid photoluminescence quenching in GaInNAs quantum wells at low temperature".journal of luminescence 122 sp.iss.si.0(2007):188-190.