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	Influence of deep level defects on electrical compensation in semi-insulating InP materials
	Yang, J (Yang Jun) ; Zhao, YW (Zhao You-Wen) ; Dong, ZY (Dong Zhi-Yuan) ; Deng, AH (Deng Ai-Hong) ; Miao, SS (Miao Shan-Shan) ; Wang, B (Wang Bo)
刊名	acta physica sinica
	2007
卷号	56期号:2页码:1167-1171
关键词	InP
ISSN号	issn: 1000-3290
通讯作者	zhao, yw, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: zhaoyw@red.semi.ac.cn
中文摘要	in this paper, we analyze and compare electrical compensation and deep level defects in semi-insulating ( si) materials prepared by fe-doping and high temperature annealing of undoped inp. influence of deep level defects in the si-inp materials on the electrical compensation has been studied thermally stimulated current spectroscopy (tsc). electrical property of the fe-doped si-inp is deteriorated due to involvement of a high concentration of deep level defects in the compensation. in contrast, the concentration of deep defects is very low in high temperature annealed undoped si-inp in which fe acceptors formed by diffusion act as the only compensation centre to pin the fermi level, resulting in excellent electrical performance. a more comprehensive electrical compensation model of si-inp has been given based on the research results.
学科主题	半导体物理
收录类别	SCI
语种	中文
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9682]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yang, J ,Zhao, YW ,Dong, ZY ,et al. Influence of deep level defects on electrical compensation in semi-insulating InP materials[J]. acta physica sinica,2007,56(2):1167-1171.
APA	Yang, J ,Zhao, YW ,Dong, ZY ,Deng, AH ,Miao, SS ,&Wang, B .(2007).Influence of deep level defects on electrical compensation in semi-insulating InP materials.acta physica sinica,56(2),1167-1171.
MLA	Yang, J ,et al."Influence of deep level defects on electrical compensation in semi-insulating InP materials".acta physica sinica 56.2(2007):1167-1171.

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