The growth of high-Al-content InAlGaN quaternary alloys by RF-MBE

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	The growth of high-Al-content InAlGaN quaternary alloys by RF-MBE
	Wang BZ ; Wang XL ; Wang XY ; Guo LC ; Wang XH ; Xiao HL ; Liu HX
刊名	journal of physics d-applied physics
	2007
卷号	40 期号:3 页码:765-768
关键词	LIGHT-EMITTING-DIODES
ISSN号	issn: 0022-3727
通讯作者	wang, bz, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china. 电子邮箱地址: wangbz@semi.ac.cn
中文摘要	high-al-content inxalyga1-x-yn (x = 1-10%, y = 34-45%) quaternary alloys were grown on sapphire by radio-frequency plasma-excited molecular beam epitaxy. rutherford back-scattering spectrometry, high resolution x-ray diffraction and cathodoluminescence were used to characterize the inalgan alloys. the experimental results show that inalgan with an appropriate al/in ratio (near 4.7, which is a lattice-match to the gan under-layer) has better crystal and optical quality than the inalgan alloys whose al/in ratios are far from 4.7. some cracks and v-defects occur in high-al/in-ratio inalgan alloys. in the cl image, the cracks and v-defect regions are the emission-enhanced regions.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9666]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang BZ,Wang XL,Wang XY,et al. The growth of high-Al-content InAlGaN quaternary alloys by RF-MBE[J]. journal of physics d-applied physics,2007,40(3):765-768.
APA	Wang BZ.,Wang XL.,Wang XY.,Guo LC.,Wang XH.,...&Liu HX.(2007).The growth of high-Al-content InAlGaN quaternary alloys by RF-MBE.journal of physics d-applied physics,40(3),765-768.
MLA	Wang BZ,et al."The growth of high-Al-content InAlGaN quaternary alloys by RF-MBE".journal of physics d-applied physics 40.3(2007):765-768.