1-mm gate periphery AlGaN/AIN/GaN HEMTs on SiC with output power of 9.39 W at 8 GHz

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	1-mm gate periphery AlGaN/AIN/GaN HEMTs on SiC with output power of 9.39 W at 8 GHz
	Wang XL ; Cheng TS ; Ma ZY ; Hu G ; Xiao HL ; Ran JX ; Wang CM ; Luo WJ
刊名	solid-state electronics
	2007
卷号	51 期号:3 页码:428-432
关键词	AlGaN/GaN
ISSN号	issn: 0038-1101
通讯作者	wang, xl, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: xlwang@red.semi.ac.cn
中文摘要	algan/aln/gan high electron mobility transistor (hemt) structures with high mobility gan channel layer were grown on 50 min diameter semi-insulating (si) 6h-sic substrates by metalorganic chemical vapor deposition and large periphery hemt devices were fabricated and characterized. high two-dimensional electron gas mobility of 2215 cm(2)/v s at room temperature with sheet electron concentration of 1.044 x 10(13)/cm(2) was achieved. the 50 mm diameter hemt wafer exhibited a low average sheet resistance of 251.0 omega/square, with the resistance uniformity of 2.02%. atomic force microscopy measurements revealed a smooth algan surface with a root-mean-square roughness of 0.27 nm for a scan area of 5 mu mi x 5 pm. the 1-mm gate width devices fabricated using the materials demonstrated a very high continuous wave output power of 9.39 w at 8 ghz, with a power added efficiency of 46.2% and power gain of 7.54 db. a maximum drain current density of 1300 ma/mm, an extrinsic transconductance of 382 ms/mm, a current gain cutoff frequency of 31 ghz and a maximum frequency of oscillation 60 ghz were also achieved in the same devices. (c) 2007 elsevier ltd. all rights reserved.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9468]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang XL,Cheng TS,Ma ZY,et al. 1-mm gate periphery AlGaN/AIN/GaN HEMTs on SiC with output power of 9.39 W at 8 GHz[J]. solid-state electronics,2007,51(3):428-432.
APA	Wang XL.,Cheng TS.,Ma ZY.,Hu G.,Xiao HL.,...&Luo WJ.(2007).1-mm gate periphery AlGaN/AIN/GaN HEMTs on SiC with output power of 9.39 W at 8 GHz.solid-state electronics,51(3),428-432.
MLA	Wang XL,et al."1-mm gate periphery AlGaN/AIN/GaN HEMTs on SiC with output power of 9.39 W at 8 GHz".solid-state electronics 51.3(2007):428-432.