Al compositional inhomogeneity of AlGaN epilayer with a high Al composition grown by metal-organic chemical vapour deposition

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	Al compositional inhomogeneity of AlGaN epilayer with a high Al composition grown by metal-organic chemical vapour deposition
	Yang H; Yang H; Zhao DG; Jiang DS
刊名	journal of physics-condensed matter
	2007
卷号	19 期号:17 页码:art.no.176005
关键词	SAPPHIRE
ISSN号	issn: 0953-8984
通讯作者	wang, xl, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: wxl@mail.semi.ac.cn
中文摘要	the a1 compositional distribution of a1gan is investigated by cathodoluminescence (cl). monochromatic cl images and cl spectra reveal a lateral a1 compositional inhomogeneity, which corresponds to surface hexagonal patterns. cross-sectional cl images show a relatively uniform al compositional distribution in the growth direction, indicating columnar growth mode of a1gan films. in addition, a thin a1gan layer with lower al composition is grown on top of the buffer a1n layer near the bottom of the a1gan epilayer because of the larger lateral mobility of ga adatoms on the growth surface and their accumulation at the grain boundaries.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9446]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yang H,Yang H,Zhao DG,et al. Al compositional inhomogeneity of AlGaN epilayer with a high Al composition grown by metal-organic chemical vapour deposition[J]. journal of physics-condensed matter,2007,19(17):art.no.176005.
APA	Yang H,Yang H,Zhao DG,&Jiang DS.(2007).Al compositional inhomogeneity of AlGaN epilayer with a high Al composition grown by metal-organic chemical vapour deposition.journal of physics-condensed matter,19(17),art.no.176005.
MLA	Yang H,et al."Al compositional inhomogeneity of AlGaN epilayer with a high Al composition grown by metal-organic chemical vapour deposition".journal of physics-condensed matter 19.17(2007):art.no.176005.