Effect of the growth mode on the two- to three-dimensional transition of InAs grown on vicinal GaAs(001) substrates

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	Effect of the growth mode on the two- to three-dimensional transition of InAs grown on vicinal GaAs(001) substrates
	Jin P
刊名	nanotechnology
	2007
卷号	18 期号:26 页码:art.no.265304
关键词	ASSEMBLED QUANTUM DOTS
ISSN号	issn: 0957-4484
通讯作者	wu, j, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china. 电子邮箱地址: wuju@red.semi.ac.cn
中文摘要	some differences were observed between conventional molecular-beam epitaxy (mbe) and mobility enhanced epitaxy (mee) of inas on a vicinal gaas(001) substrate in the variation of the number density n of the inas islands, with additional inas coverage (theta - theta(c)) after the critical inas coverage theta(c) during the two- to three-dimensional (2d-3d) transition. for mbe the variation was consistent with the power law n(theta) (theta similar to theta(c))(alpha); while for mee, the linear relation n(theta) proportional to (theta - theta(c)) was observed. the difference is discussed in terms of the randomness in the nucleation of the inas islands.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9440]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jin P. Effect of the growth mode on the two- to three-dimensional transition of InAs grown on vicinal GaAs(001) substrates[J]. nanotechnology,2007,18(26):art.no.265304.
APA	Jin P.(2007).Effect of the growth mode on the two- to three-dimensional transition of InAs grown on vicinal GaAs(001) substrates.nanotechnology,18(26),art.no.265304.
MLA	Jin P."Effect of the growth mode on the two- to three-dimensional transition of InAs grown on vicinal GaAs(001) substrates".nanotechnology 18.26(2007):art.no.265304.