InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy

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	InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy
	Gao FB (Gao Fubao) ; Chen NF (Chen NuoFu) ; Liu L (Liu Lei) ; Zhang XW (Zhang X. W.) ; Wu JL (Wu Jinliang) ; Yin ZG (Yin Zhigang)
刊名	journal of crystal growth
	2007
卷号	304 期号:2 页码:472-475
关键词	crystal structure
ISSN号	issn: 0022-0248
通讯作者	gao, fb, chinese acad sci, inst semicond, key lab semicond mat sci, po box 912, beijing 100083, peoples r china. 电子邮箱地址: fbgao@semi.ac.cn
中文摘要	the growth of inasxsb1-x films on (100) gasb substrates by liquid-phase epitaxy (lpe) has been investigated and epitaxial inas0.3sb0.7 films with inas0.9sb0.09 buffer layers have been successfully obtained. the low x-ray rocking curve fhwm values of inas0.3sb0.7 layer shows the high quality of crystal-orientation structure. hall measurements show that the highest electron mobility in the samples obtained is 2.9 x 10(4) cm(2) v-1 s(-1) and the carrier density is 2.78 x 10(16)cm(-3) at room temperature (rt). the in as0.3sb0.7 films grown on (10 0) gasb substrates exhibit excellent optical performance with a cut-off wavelength of 12 mu m. (c) 2007 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9380]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Gao FB ,Chen NF ,Liu L ,et al. InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy[J]. journal of crystal growth,2007,304(2):472-475.
APA	Gao FB ,Chen NF ,Liu L ,Zhang XW ,Wu JL ,&Yin ZG .(2007).InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy.journal of crystal growth,304(2),472-475.
MLA	Gao FB ,et al."InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy".journal of crystal growth 304.2(2007):472-475.