A new Schottky barrier structure of GaN-based ultraviolet photodetector

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	A new Schottky barrier structure of GaN-based ultraviolet photodetector
	Zhou, M (Zhou Mei) ; Zuo, SH (Zuo Shu-Hua) ; Zhao, DG (Zhao De-Gang)
刊名	acta physica sinica
	2007
卷号	56 期号:9 页码:5513-5517
关键词	GaN
ISSN号	issn: 1000-3290
通讯作者	zhao, dg, china agr univ, dept phys, beijing 100083, peoples r china. 电子邮箱地址: dgzhao@red.semi.ac.cn
中文摘要	a new gan-based ultraviolet photodetector with schottky barrior structure is proposed. comparied with the conventional i-gan/n(+) -gan structure, there is an additional thin n-algan cap layer on the i-gan in the new structure. the simulation result demonstrates that the new structure leads to an increased quantum efficiency in gan photodetection, since the negative effect of surface states on the photodetector is reduced in the new structure. in addition, it is suggested that the performance of device with the new structure could be further improved by employing an even thinner algan cap layer with higher carrier concentration.
学科主题	光电子学
收录类别	SCI
语种	中文
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9262]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhou, M ,Zuo, SH ,Zhao, DG . A new Schottky barrier structure of GaN-based ultraviolet photodetector[J]. acta physica sinica,2007,56(9):5513-5517.
APA	Zhou, M ,Zuo, SH ,&Zhao, DG .(2007).A new Schottky barrier structure of GaN-based ultraviolet photodetector.acta physica sinica,56(9),5513-5517.
MLA	Zhou, M ,et al."A new Schottky barrier structure of GaN-based ultraviolet photodetector".acta physica sinica 56.9(2007):5513-5517.