Double hydrogenic impurities in double quantum dots

	Double hydrogenic impurities in double quantum dots
	Wang, XF (Wang, Xue-Feng) ; Liu, YH (Liu, Yong-Hui)
刊名	journal of applied physics
	2007
卷号	102 期号:6 页码:art.no.063708
关键词	ELECTRONIC-STRUCTURE
ISSN号	issn: 0021-8979
通讯作者	wang, xf, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: wangxf@red.semi.ac.cn
中文摘要	the ground states and degree of entanglement of double hydrogenic impurities in a pair of vertically stacked ingaas/gaas quantum dots are studied with a proposed diagonalization technique. it is found that at short barrier widths, the entanglement is small due to the coupling between the intra- and interdot orbitals. at large barrier widths, large entanglement occurs.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9250]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang, XF ,Liu, YH . Double hydrogenic impurities in double quantum dots[J]. journal of applied physics,2007,102(6):art.no.063708.
APA	Wang, XF ,&Liu, YH .(2007).Double hydrogenic impurities in double quantum dots.journal of applied physics,102(6),art.no.063708.
MLA	Wang, XF ,et al."Double hydrogenic impurities in double quantum dots".journal of applied physics 102.6(2007):art.no.063708.