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	Comparison between gradient-doping GaAs photocathode and uniform-doping GaAs photocathode
	Yang Z (Yang Zhi) ; Chang B (Chang Benkang) ; Zou J (Zou Jijun) ; Qiao J (Qiao Jianliang) ; Gao P (Gao Pin) ; Zeng Y (Zeng Yiping) ; Li H (Li Hui)
刊名	applied optics
	2007
卷号	46期号:28页码:7035-7039
关键词	ACTIVATED GAAS
ISSN号	issn: 0003-6935
通讯作者	chang, b, nanjing inst sci & technol, inst elect engn & optpelect technol, nanjing 210094, jiangsu, peoples r china. 电子邮箱地址: bkchang@mail.njust.edu.cn
中文摘要	we compared two reflection-mode negative electron affinity (nea) gaas photocathode samples that are grown by molecular beam epitaxy with p-type beryllium doping. one sample is uniform doping, and another is gradient doping. experimental curves of spectral response sensitivity and quantum efficiency are obtained. the thicknesses of the two cathodes are both 2.6 mu m. the integrated sensitivity of the uniform doping one is 1966 mu a/lm, and that of the gradient-doping one is 2421 mu a/lm. the escape probability and diffusion length are fitted from the spectral response curves. for the uniform-doping sample, the escape probability is 0.45 and the diffusion length is 5 mu m. for the gradient-doping sample, the escape probability is 0.55 and the diffusion length is 5.5 mu m. (c) 2007 optical society of america.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9216]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yang Z ,Chang B ,Zou J ,et al. Comparison between gradient-doping GaAs photocathode and uniform-doping GaAs photocathode[J]. applied optics,2007,46(28):7035-7039.
APA	Yang Z .,Chang B .,Zou J .,Qiao J .,Gao P .,...&Li H .(2007).Comparison between gradient-doping GaAs photocathode and uniform-doping GaAs photocathode.applied optics,46(28),7035-7039.
MLA	Yang Z ,et al."Comparison between gradient-doping GaAs photocathode and uniform-doping GaAs photocathode".applied optics 46.28(2007):7035-7039.

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