Magnetic properties of Mn-implanted n-type Ge
Yin ZG
刊名journal of crystal growth
2004
卷号273期号:1-2页码:106-110
关键词ferromagnetism
ISSN号0022-0248
通讯作者liu, lf, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: lfliu@red.semi.ac.cn
中文摘要mn+ ions were implanted into n-type ge(1 1 1) single crystal at room temperature at an energy of 100 kev with a dose of 3 x 10(16) cm(-2). subsequent annealing was performed on the samples at 400 degreesc and 600 degreesc in a flowing nitrogen atmosphere. the magnetic properties of the samples have been investigated by alternating gradient magnetometer at room temperature. the compositional properties of the annealed samples were studied by auger electron spectroscopy and the structural properties were analyzed by x-ray diffraction measurements. magnetization measurements reveal room-temperature ferromagnetism for the annealed samples. the magnetic analysis supported by compositional and structural properties indicates that forming the diluted magnetic semiconductor (dms) mnxge1-x after annealing may account for the ferromagnetic behavior in the annealed samples. (c) 2004 elsevier b.v. all rights reserved.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-03-17
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/8916]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Yin ZG. Magnetic properties of Mn-implanted n-type Ge[J]. journal of crystal growth,2004,273(1-2):106-110.
APA Yin ZG.(2004).Magnetic properties of Mn-implanted n-type Ge.journal of crystal growth,273(1-2),106-110.
MLA Yin ZG."Magnetic properties of Mn-implanted n-type Ge".journal of crystal growth 273.1-2(2004):106-110.
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