Structural and optoelectronic properties of selenium-doped silicon formed using picosecond pulsed laser mixing

	Structural and optoelectronic properties of selenium-doped silicon formed using picosecond pulsed laser mixing
	Hu, Shaoxu ; Han, Peide ; Wang, Shuai ; Mao, Xue ; Li, Xinyi ; Gao, Lipeng
刊名	physica status solidi (a) applications and materials science
	2012
卷号	209 期号:12 页码:2521-2526
学科主题	光电子学
收录类别	EI
公开日期	2013-05-07
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23945]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Hu, Shaoxu,Han, Peide,Wang, Shuai,et al. Structural and optoelectronic properties of selenium-doped silicon formed using picosecond pulsed laser mixing[J]. physica status solidi (a) applications and materials science,2012,209(12):2521-2526.
APA	Hu, Shaoxu,Han, Peide,Wang, Shuai,Mao, Xue,Li, Xinyi,&Gao, Lipeng.(2012).Structural and optoelectronic properties of selenium-doped silicon formed using picosecond pulsed laser mixing.physica status solidi (a) applications and materials science,209(12),2521-2526.
MLA	Hu, Shaoxu,et al."Structural and optoelectronic properties of selenium-doped silicon formed using picosecond pulsed laser mixing".physica status solidi (a) applications and materials science 209.12(2012):2521-2526.