Passive Q-switching modelocked Yb3+-doped fibre laser with GaAs absorber grown at low temperature

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	Passive Q-switching modelocked Yb3+-doped fibre laser with GaAs absorber grown at low temperature
	Feng, XM ; Wang, YG ; Liu, YY ; Lan, YS ; Lin, T ; Wang, J ; Wang, XW ; Fang, GZ ; Ma, XY ; Wang, YG ; Zhang, ZG
刊名	chinese physics letters
	2005
卷号	22 期号:2 页码:391-393
关键词	ND-YAG LASER
ISSN号	0256-307x
通讯作者	feng, xm, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: chinawygxjw@163.com
中文摘要	gaas absorber was grown at low temperature (550degreesc) by metal organic chemical vapour deposition (mocvd) and was used as an output coupler with which we realized q-switching modelocked yb3+-doped fibre laser. the shortest period of the envelope of the q-switched modelocking is about 3mus. the modelocking threshold is 4.27w and the highest average output pulse power is 290 mw. the modelocking frequency is 12 mhz.
学科主题	半导体器件
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8882]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Feng, XM,Wang, YG,Liu, YY,et al. Passive Q-switching modelocked Yb3+-doped fibre laser with GaAs absorber grown at low temperature[J]. chinese physics letters,2005,22(2):391-393.
APA	Feng, XM.,Wang, YG.,Liu, YY.,Lan, YS.,Lin, T.,...&Zhang, ZG.(2005).Passive Q-switching modelocked Yb3+-doped fibre laser with GaAs absorber grown at low temperature.chinese physics letters,22(2),391-393.
MLA	Feng, XM,et al."Passive Q-switching modelocked Yb3+-doped fibre laser with GaAs absorber grown at low temperature".chinese physics letters 22.2(2005):391-393.