Theoretical study of the effects of InAs/GaAs quantum dot layer

	Theoretical study of the effects of InAs/GaAs quantum dot layer
	Gu, Yong-Xian ; Yang, Xiao-Guang ; Ji, Hai-Ming ; Xu, Peng-Fei ; Yang, Tao
刊名	applied physics letters
	2012
卷号	101 期号:8 页码:081118
学科主题	半导体材料
收录类别	EI
语种	英语
公开日期	2013-05-07
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23965]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Gu, Yong-Xian,Yang, Xiao-Guang,Ji, Hai-Ming,et al. Theoretical study of the effects of InAs/GaAs quantum dot layer[J]. applied physics letters,2012,101(8):081118.
APA	Gu, Yong-Xian,Yang, Xiao-Guang,Ji, Hai-Ming,Xu, Peng-Fei,&Yang, Tao.(2012).Theoretical study of the effects of InAs/GaAs quantum dot layer.applied physics letters,101(8),081118.
MLA	Gu, Yong-Xian,et al."Theoretical study of the effects of InAs/GaAs quantum dot layer".applied physics letters 101.8(2012):081118.