QE and Suns-V-oc study on the epitaxial CSiTF solar cells

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	QE and Suns-V-oc study on the epitaxial CSiTF solar cells
	Bin A ; Shen H ; Ban Q ; Liang ZC ; Chen RL ; Shi ZR ; Liao XB
刊名	science in china series e-engineering & materials science
	2005
卷号	48 期号:1 页码:41-52
关键词	SSP ribbon
ISSN号	1006-9321
通讯作者	bin, a, sun yat sen univ, energy engn acad, inst solar energy syst, guangzhou 510275, peoples r china. 电子邮箱地址: aibin@ms.giec.ac.cn ; shenhuil956@163.com
中文摘要	in order to clarify the major factors having confined the efficiencies of as-prepared crystalline silicon thin film (csitf) solar cells on the ssp (silicon sheets from powder) ribbons, qe (quantum efficiency) and suns-v-oc study were performed on the epitaxial csitf solar cells fabricated on the ssp ribbons, the ssp ribbons after surface being zone melting recrystallized (zmr) and single crystalline silicon (sc-si) substrates. the results show that the epi-layers deposited on the ssp ribbons have rough surfaces, which not only increases the diffusion reflectance on the surfaces but also makes the anti-reflection coatings become structure-loosened, both of which would deteriorate the light trapping effect; in addition, the epi-layers deposited on the ssp ribbons possess poor crystallographic quality, so the heavy grain boundary (gb) recombination limits the diffusion length of the minority carriers in the epi-layers, which makes the as-prepared csitf solar cells suffer the worse spectra response at long-wavelength range. nearly all the dark characteristic parameters of the csitf solar cells are far away from the ideal values. the performances of the csitf solar cells are especially affected by too high i-02 (the dark saturation current of space charge region) values and too low r-sh (parallel resistance) values. the higher 102 values are mainly caused by the heavy gb recombination resulting from the poor crystallographic qualities of the silicon active layers in the space charge regions, while the lower r-sh values are attributed to the electrical leakage at the un-passivated pn junction or solar cell edges after the solar cells are cut by the laser scriber.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8810]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Bin A,Shen H,Ban Q,et al. QE and Suns-V-oc study on the epitaxial CSiTF solar cells[J]. science in china series e-engineering & materials science,2005,48(1):41-52.
APA	Bin A.,Shen H.,Ban Q.,Liang ZC.,Chen RL.,...&Liao XB.(2005).QE and Suns-V-oc study on the epitaxial CSiTF solar cells.science in china series e-engineering & materials science,48(1),41-52.
MLA	Bin A,et al."QE and Suns-V-oc study on the epitaxial CSiTF solar cells".science in china series e-engineering & materials science 48.1(2005):41-52.