Nanocavity shrinkage and preferential amorphization during irradiation in silicon

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	Nanocavity shrinkage and preferential amorphization during irradiation in silicon
	Zhu XF ; Wang ZG
刊名	chinese physics letters
	2005
卷号	22 期号:3 页码:657-660
关键词	AMORPHOUS-SILICON
ISSN号	0256-307x
通讯作者	zhu, xf, xiamen univ, dept phys, lab low dimens nanostruct, xiamen 361005, peoples r china. 电子邮箱地址: xianfangzhu@hotmail.com
中文摘要	we model the recent experimental results and demonstrate that the internal shrinkage of nanocavities in silicon is intrinsically associated with preferential amorphization as induced by self-ion irradiation. the results reveal novel thermodynamic nonequilibrium properties of such an open-volume nanostructure in condensed matter and also of covalently bound amorphous materials both at nanosize scale and during ultrafast interaction with energetic beam.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8756]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhu XF,Wang ZG. Nanocavity shrinkage and preferential amorphization during irradiation in silicon[J]. chinese physics letters,2005,22(3):657-660.
APA	Zhu XF,&Wang ZG.(2005).Nanocavity shrinkage and preferential amorphization during irradiation in silicon.chinese physics letters,22(3),657-660.
MLA	Zhu XF,et al."Nanocavity shrinkage and preferential amorphization during irradiation in silicon".chinese physics letters 22.3(2005):657-660.