Characterization of stress induced in SOS and Si/gamma-Al2O3/Si heteroepitaxial thin films by Raman spectroscopy

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	Characterization of stress induced in SOS and Si/gamma-Al2O3/Si heteroepitaxial thin films by Raman spectroscopy
	Wang QY ; Wang J ; Wang JH ; Liu ZL ; Lin LY
刊名	journal of crystal growth
	2005
卷号	280 期号:1-2 页码:222-226
关键词	Raman spectra
ISSN号	0022-0248
通讯作者	wang, qy, chinese acad sci, inst semicond, novl semicond mat lab, pob 912, beijing 100083, peoples r china. 电子邮箱地址: qywang@red.semi.ac.cn
中文摘要	raman spectroscopy technique has been performed to investigate the stress induced in as-grown silicon-on-sapphire (sos), solid-phase-epitaxy (spe) re-grown sos, and si/gamma-al2o3/si double-heteroepitaxial thin films. it was demonstrated that the residual stress in sos film, arising from mismatch and difference of thermal expansion coefficient between silicon and sapphire, was reduced efficiently by spe process, and that the stress in si/gamma-al2o3/si thin film is much smaller than that of as-grown sos and spe upgraded sos films. the stress decrease for double heteroepitaxial film si/gamma-al2o3/si mainly arises from the smaller lattice mismatching of 2.4% between silicon top layer and the gamma-al2o3/si epitaxiial composite substrate, comparing with the large lattice mismatch of 13% for sos films. it indicated that gamma-al2o3/si as a silicon-based epitaxial substrate benefits for reducing the residual stress for further growth of silicon layer, compared with on bulk sapphire substrate. (c) 2005 elsevier b.v. all rights reserved.
学科主题	微电子学
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8670]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang QY,Wang J,Wang JH,et al. Characterization of stress induced in SOS and Si/gamma-Al2O3/Si heteroepitaxial thin films by Raman spectroscopy[J]. journal of crystal growth,2005,280(1-2):222-226.
APA	Wang QY,Wang J,Wang JH,Liu ZL,&Lin LY.(2005).Characterization of stress induced in SOS and Si/gamma-Al2O3/Si heteroepitaxial thin films by Raman spectroscopy.journal of crystal growth,280(1-2),222-226.
MLA	Wang QY,et al."Characterization of stress induced in SOS and Si/gamma-Al2O3/Si heteroepitaxial thin films by Raman spectroscopy".journal of crystal growth 280.1-2(2005):222-226.