Realization of highly uniform self-assembled InAs quantum wires by the strain compensating technique

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	Realization of highly uniform self-assembled InAs quantum wires by the strain compensating technique
	Huang, XQ ; Wang, YL ; Li, L ; Liang, L ; Liu, FQ
刊名	applied physics letters
	2005
卷号	87 期号:8 页码:art.no.083108
关键词	INP(001)
ISSN号	0003-6951
通讯作者	liu, fq, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: fqliu@red.semi.ac.cn
中文摘要	self-assembled inas quantum wires (qwrs) on inp(001) substrate have been grown by molecular-beam epitaxy, using a strain compensating technique. atom force microscope, transmission electron microscopy, and high-resolution x-ray diffraction are used to characterize their structural properties. we proposed that, by carefully adjusting composition of inalgaas buffer layer and strain compensating spacer layers, stacked qwrs with high uniformity could be achieved. in addition, the formation mechanism and vertical anti-correlation of qwrs are also discussed. (c) 2005 american institute of physics.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8574]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Huang, XQ,Wang, YL,Li, L,et al. Realization of highly uniform self-assembled InAs quantum wires by the strain compensating technique[J]. applied physics letters,2005,87(8):art.no.083108.
APA	Huang, XQ,Wang, YL,Li, L,Liang, L,&Liu, FQ.(2005).Realization of highly uniform self-assembled InAs quantum wires by the strain compensating technique.applied physics letters,87(8),art.no.083108.
MLA	Huang, XQ,et al."Realization of highly uniform self-assembled InAs quantum wires by the strain compensating technique".applied physics letters 87.8(2005):art.no.083108.