Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness

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	Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness
	Ye XL; Xu B
刊名	journal of crystal growth
	2005
卷号	284 期号:1-2 页码:20-27
关键词	annealing
ISSN号	0022-0248
通讯作者	lei, w, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: ahleiwen@red.semi.ac.cn
中文摘要	we have studied the effect of the post-growth rapid thermal annealing on optical and electrical properties of inas/inalas/inp quantum wires with various inas deposited thickness. quite different annealing behaviors in photoluminescence and dark resistance are observed, which can be attributed to dislocations in samples. after annealing at 800 degrees c, quantum wires still exist in the sample with two monolayer inas deposited thickness, but the temperature-dependent pl properties are changed greatly due to the intermixing of in/al atoms. (c) 2005 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8478]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ye XL,Xu B. Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness[J]. journal of crystal growth,2005,284(1-2):20-27.
APA	Ye XL,&Xu B.(2005).Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness.journal of crystal growth,284(1-2),20-27.
MLA	Ye XL,et al."Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness".journal of crystal growth 284.1-2(2005):20-27.