A method to estimate the strain state of SiGe/Si by measuring the bandgap

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	A method to estimate the strain state of SiGe/Si by measuring the bandgap
	Xue CL
刊名	acta physica sinica
	2005
卷号	54 期号:9 页码:4350-4353
关键词	SiGe alloy
ISSN号	1000-3290
通讯作者	cheng, bw, chinese acad sci, inst semicond, beijing 100083, peoples r china.
中文摘要	sing the result of model-solid theory, we have obtained the relationship between bandgap and strain of si1-x ge-x alloy on si (100) substrate with x < 0.85. it was shown that the deviation between the bandgap of strained sige and relaxed sige is proportional to the strain. according to the theoretical result, a novel method was suggested to determine the strain state of sige/ si through measuring the bandgap. the strain in the sige/si multi-quantum wells was measured using the new method and the results had good agreement with that from xrd measurement.
学科主题	光电子学
收录类别	SCI
语种	中文
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8440]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xue CL. A method to estimate the strain state of SiGe/Si by measuring the bandgap[J]. acta physica sinica,2005,54(9):4350-4353.
APA	Xue CL.(2005).A method to estimate the strain state of SiGe/Si by measuring the bandgap.acta physica sinica,54(9),4350-4353.
MLA	Xue CL."A method to estimate the strain state of SiGe/Si by measuring the bandgap".acta physica sinica 54.9(2005):4350-4353.