An Integrated Phase Change Memory Cell with Dual Trench Epitaxial Diode Selector

	An Integrated Phase Change Memory Cell with Dual Trench Epitaxial Diode Selector
	Zhang, C ; song, zt(重点实验室） ; Wu, GP ; Liu, B(重点实验室） ; Wang, LH ; Xu, J ; Liu, Y ; Wang, L ; Yang, ZY ; Feng, SL(重点实验室）
刊名	CHINESE PHYSICS LETTERS
	2012
卷号	29 期号:3 页码:38104
关键词	Physics Multidisciplinary
ISSN号	0256-307X
学科主题	Physics
收录类别	SCI
原文出处	10.1088/0256-307X/29/3/038104
语种	英语
公开日期	2013-05-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/115545]
专题	上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文
推荐引用方式 GB/T 7714	Zhang, C,song, zt,Wu, GP,et al. An Integrated Phase Change Memory Cell with Dual Trench Epitaxial Diode Selector[J]. CHINESE PHYSICS LETTERS,2012,29(3):38104.
APA	Zhang, C.,song, zt.,Wu, GP.,Liu, B.,Wang, LH.,...&Feng, SL.(2012).An Integrated Phase Change Memory Cell with Dual Trench Epitaxial Diode Selector.CHINESE PHYSICS LETTERS,29(3),38104.
MLA	Zhang, C,et al."An Integrated Phase Change Memory Cell with Dual Trench Epitaxial Diode Selector".CHINESE PHYSICS LETTERS 29.3(2012):38104.