A 130nm 1Mb Embedded Phase Change Memory with 500kb/s Single Channel Write Throughput

	A 130nm 1Mb Embedded Phase Change Memory with 500kb/s Single Channel Write Throughput
	Ding, S ; song, zt(重点实验室） ; Chen, HP ; Cai, DL ; Wang, Q ; Chen, YF ; Chen, XG ; Wu, GP ; Feng, GM ; Xu, C ; Zhong, M ; Xie, ZF
刊名	INTERNATIONAL WORKSHOP ON AUTOMOBILE, POWER AND ENERGY ENGINEERING
	2011
卷号	16 页码:-
关键词	Energy & Fuels Transportation Science & Technology
ISSN号	1877-7058
学科主题	Energy & Fuels; Transportation
收录类别	SCI
原文出处	10.1016/j.proeng.2011.08.1072
语种	英语
公开日期	2013-05-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/115500]
专题	上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文
推荐引用方式 GB/T 7714	Ding, S,song, zt,Chen, HP,et al. A 130nm 1Mb Embedded Phase Change Memory with 500kb/s Single Channel Write Throughput[J]. INTERNATIONAL WORKSHOP ON AUTOMOBILE, POWER AND ENERGY ENGINEERING,2011,16:-.
APA	Ding, S.,song, zt.,Chen, HP.,Cai, DL.,Wang, Q.,...&Xie, ZF.(2011).A 130nm 1Mb Embedded Phase Change Memory with 500kb/s Single Channel Write Throughput.INTERNATIONAL WORKSHOP ON AUTOMOBILE, POWER AND ENERGY ENGINEERING,16,-.
MLA	Ding, S,et al."A 130nm 1Mb Embedded Phase Change Memory with 500kb/s Single Channel Write Throughput".INTERNATIONAL WORKSHOP ON AUTOMOBILE, POWER AND ENERGY ENGINEERING 16(2011):-.