Investigation of GeTe/Ge2Sb2Te5 Nanocomposite Multilayer Films for Phase-Change Memory Applications

	Investigation of GeTe/Ge2Sb2Te5 Nanocomposite Multilayer Films for Phase-Change Memory Applications
	Wang, CZ ; Zhai, JW ; Song, SN ; song, zt(重点实验室） ; Sun, MC ; Shen, B
刊名	ELECTROCHEMICAL AND SOLID STATE LETTERS
	2011
卷号	14 期号:7 页码:H258-H260
关键词	Electrochemistry Materials Science Multidisciplinary
ISSN号	1099-0062
学科主题	Electrochemistry; Materials Science
收录类别	SCI
原文出处	10.1149/1.3578386
语种	英语
公开日期	2013-05-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/115497]
专题	上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文
推荐引用方式 GB/T 7714	Wang, CZ,Zhai, JW,Song, SN,et al. Investigation of GeTe/Ge2Sb2Te5 Nanocomposite Multilayer Films for Phase-Change Memory Applications[J]. ELECTROCHEMICAL AND SOLID STATE LETTERS,2011,14(7):H258-H260.
APA	Wang, CZ,Zhai, JW,Song, SN,song, zt,Sun, MC,&Shen, B.(2011).Investigation of GeTe/Ge2Sb2Te5 Nanocomposite Multilayer Films for Phase-Change Memory Applications.ELECTROCHEMICAL AND SOLID STATE LETTERS,14(7),H258-H260.
MLA	Wang, CZ,et al."Investigation of GeTe/Ge2Sb2Te5 Nanocomposite Multilayer Films for Phase-Change Memory Applications".ELECTROCHEMICAL AND SOLID STATE LETTERS 14.7(2011):H258-H260.