Three-Dimensional Finite Element Analysis of Phase Change Memory Cell with Thin TiO2 Film

	Three-Dimensional Finite Element Analysis of Phase Change Memory Cell with Thin TiO2 Film
	Liu, Y ; song, zt(重点实验室） ; Ling, Y ; Feng, SL(重点实验室）
刊名	CHINESE PHYSICS LETTERS
	2010
卷号	27 期号:3 页码:38502
关键词	Physics Multidisciplinary
ISSN号	0256-307X
学科主题	Physics
收录类别	SCI
原文出处	10.1088/0256-307X/27/3/038502
语种	英语
公开日期	2013-05-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/115470]
专题	上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文
推荐引用方式 GB/T 7714	Liu, Y,song, zt,Ling, Y,et al. Three-Dimensional Finite Element Analysis of Phase Change Memory Cell with Thin TiO2 Film[J]. CHINESE PHYSICS LETTERS,2010,27(3):38502.
APA	Liu, Y,song, zt,Ling, Y,&Feng, SL.(2010).Three-Dimensional Finite Element Analysis of Phase Change Memory Cell with Thin TiO2 Film.CHINESE PHYSICS LETTERS,27(3),38502.
MLA	Liu, Y,et al."Three-Dimensional Finite Element Analysis of Phase Change Memory Cell with Thin TiO2 Film".CHINESE PHYSICS LETTERS 27.3(2010):38502.