Dynamical band-engineering of spin-polarized edge-states in normal insulators | |
Wu, BH ; Liu, Q ; Jiang, XY ; Cao, JC | |
刊名 | APPLIED PHYSICS LETTERS |
2012 | |
卷号 | 100期号:20页码:203106 |
关键词 | Physics Applied |
ISSN号 | 0003-6951 |
学科主题 | Physics |
收录类别 | SCI |
原文出处 | 10.1063/1.4717987 |
语种 | 英语 |
公开日期 | 2013-05-10 |
内容类型 | 期刊论文 |
源URL | [http://ir.sim.ac.cn/handle/331004/115305] |
专题 | 上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文 |
推荐引用方式 GB/T 7714 | Wu, BH,Liu, Q,Jiang, XY,et al. Dynamical band-engineering of spin-polarized edge-states in normal insulators[J]. APPLIED PHYSICS LETTERS,2012,100(20):203106. |
APA | Wu, BH,Liu, Q,Jiang, XY,&Cao, JC.(2012).Dynamical band-engineering of spin-polarized edge-states in normal insulators.APPLIED PHYSICS LETTERS,100(20),203106. |
MLA | Wu, BH,et al."Dynamical band-engineering of spin-polarized edge-states in normal insulators".APPLIED PHYSICS LETTERS 100.20(2012):203106. |
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