MOVPE growth of grade-strained bulk InGaAs/InP for broad-band optoelectronic device applications

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	MOVPE growth of grade-strained bulk InGaAs/InP for broad-band optoelectronic device applications
	Wang SR ; Wang W ; Zhu HL ; Zhao LJ ; Zhang RY ; Zhou F ; Shu HY ; Wang RF
刊名	journal of crystal growth
	2004
卷号	260 期号:3-4 页码:464-468
关键词	graded-strain
ISSN号	0022-0248
通讯作者	wang, sr, chinese acad sci, inst semicond, natl res ctr optoelect technol, beijing 100083, peoples r china.
中文摘要	in this paper we present a novel growth of grade-strained bulk ingaas/inp by linearly changing group-iii tmga source flow during low-pressure metalorganic vapor-phase epitaxy (lp-movpe). the high-resolution x-ray diffraction (hrxrd) measurements showed that much different strain was simultaneously introduced into the fabricated bulk ingaas/inp by utilizing this novel growth method. we experimentally demonstrated the utility and simplicity of the growth method by fabricating common laser diodes. as a first step, under the injection current of 100 ma, a more flat gain curve which has a spectral full-width at half-maximum (fwhm) of about 120 nm was achieved by using the presented growth technique. our experimental results show that the simple and new growth method is very suitable for fabricating broad-band semiconductor optoelectronic devices. (c) 2003 elsevier b.v. all rights reserved.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8232]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang SR,Wang W,Zhu HL,et al. MOVPE growth of grade-strained bulk InGaAs/InP for broad-band optoelectronic device applications[J]. journal of crystal growth,2004,260(3-4):464-468.
APA	Wang SR.,Wang W.,Zhu HL.,Zhao LJ.,Zhang RY.,...&Wang RF.(2004).MOVPE growth of grade-strained bulk InGaAs/InP for broad-band optoelectronic device applications.journal of crystal growth,260(3-4),464-468.
MLA	Wang SR,et al."MOVPE growth of grade-strained bulk InGaAs/InP for broad-band optoelectronic device applications".journal of crystal growth 260.3-4(2004):464-468.