External electric field effect on the hydrogenic donor impurity in zinc-blende InGaN/GaN cylindrical quantum well wire

	External electric field effect on the hydrogenic donor impurity in zinc-blende InGaN/GaN cylindrical quantum well wire
	Wang, HL ; Jiang, LM ; Gong, QA ; Feng, SL(重点实验室）
刊名	PHYSICA B-CONDENSED MATTER
	2010
卷号	405 期号:18 页码:3818-3821
关键词	Physics Condensed Matter
ISSN号	0921-4526
学科主题	Physics
收录类别	SCI
原文出处	10.1016/j.physb.2010.06.008
语种	英语
公开日期	2013-05-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/115264]
专题	上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文
推荐引用方式 GB/T 7714	Wang, HL,Jiang, LM,Gong, QA,et al. External electric field effect on the hydrogenic donor impurity in zinc-blende InGaN/GaN cylindrical quantum well wire[J]. PHYSICA B-CONDENSED MATTER,2010,405(18):3818-3821.
APA	Wang, HL,Jiang, LM,Gong, QA,&Feng, SL.(2010).External electric field effect on the hydrogenic donor impurity in zinc-blende InGaN/GaN cylindrical quantum well wire.PHYSICA B-CONDENSED MATTER,405(18),3818-3821.
MLA	Wang, HL,et al."External electric field effect on the hydrogenic donor impurity in zinc-blende InGaN/GaN cylindrical quantum well wire".PHYSICA B-CONDENSED MATTER 405.18(2010):3818-3821.