Electronic properties of GaAs/GayIn1-yNxAs1-y-xSby superlattices

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	Electronic properties of GaAs/GayIn1-yNxAs1-y-xSby superlattices
	Niu, ZC ; Ni, HQ ; Xu, XH ; Zhang, W ; Xu, YQ ; Wu, RH
刊名	physical review b
	2003
卷号	68 期号:23 页码:art.no.235326
关键词	MOLECULAR-BEAM EPITAXY
ISSN号	1098-0121
通讯作者	niu, zc, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china.
中文摘要	using keating's semiempirical valence force field model and monte carlo simulation, we calculate the bond distributions and atom positions of gaas/gainnassb superlattices. the electronic structures of the superlattices are calculated using the folded spectrum method combined with an empirical pseudopotential proposed by williamson the effects of n and sb on superlattice energy levels are discussed. the deterioration of the optical properties induced by n is explained by the localization of the conduction-band states around the n atom. the electron and hole effective masses of the superlattices are calculated and compared with the effective masses of the gaas and gainas.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8204]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Niu, ZC,Ni, HQ,Xu, XH,et al. Electronic properties of GaAs/GayIn1-yNxAs1-y-xSby superlattices[J]. physical review b,2003,68(23):art.no.235326.
APA	Niu, ZC,Ni, HQ,Xu, XH,Zhang, W,Xu, YQ,&Wu, RH.(2003).Electronic properties of GaAs/GayIn1-yNxAs1-y-xSby superlattices.physical review b,68(23),art.no.235326.
MLA	Niu, ZC,et al."Electronic properties of GaAs/GayIn1-yNxAs1-y-xSby superlattices".physical review b 68.23(2003):art.no.235326.