Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications

	Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications
	Cao, X ; Li, XM ; Gao, XD ; Yu, WD ; Liu, XJ ; Zhang, YW ; Chen, LD ; Cheng, XH（重点实验室）
刊名	JOURNAL OF APPLIED PHYSICS
	2009
卷号	106 期号:7 页码:73723
关键词	Physics Applied
ISSN号	0021-8979
学科主题	Physics
收录类别	SCI
原文出处	10.1063/1.3236573
语种	英语
公开日期	2013-05-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/115102]
专题	上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文
推荐引用方式 GB/T 7714	Cao, X,Li, XM,Gao, XD,et al. Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications[J]. JOURNAL OF APPLIED PHYSICS,2009,106(7):73723.
APA	Cao, X.,Li, XM.,Gao, XD.,Yu, WD.,Liu, XJ.,...&Cheng, XH.(2009).Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications.JOURNAL OF APPLIED PHYSICS,106(7),73723.
MLA	Cao, X,et al."Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications".JOURNAL OF APPLIED PHYSICS 106.7(2009):73723.