Fabrication of GdSi2 film by low-energy ion-beam implantation

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	Fabrication of GdSi2 film by low-energy ion-beam implantation
	Li YL ; Chen NF ; Zhou JP ; Song SL ; Yang SY ; Liu ZK
刊名	journal of crystal growth
	2004
卷号	262 期号:1-4 页码:186-190
关键词	scanning electron microscopy
ISSN号	0022-0248
通讯作者	li, yl, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: ylli@red.semi.ac.cn
中文摘要	single-phase gadolinium disilicide was fabricated by a low-energy ion-beam implantation technique. auger electron spectroscopy and x-ray photoelectron spectroscopy were used to determine the composition and chemical states of the film. the structure of the sample was analyzed by x-ray diffraction and the surface morphology was investigated by scan electron microscopy. based on the measurements, only orthorhombic gdsi2 phase was found in the sample and the surface morphology was pitting. after annealing at 350degreesc for 30 min at ar atmosphere, the full-width at half-maximum of gdsi2 became narrower. it indicates that the gdsi2 is crystallized better after annealing. (c) 2003 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8168]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li YL,Chen NF,Zhou JP,et al. Fabrication of GdSi2 film by low-energy ion-beam implantation[J]. journal of crystal growth,2004,262(1-4):186-190.
APA	Li YL,Chen NF,Zhou JP,Song SL,Yang SY,&Liu ZK.(2004).Fabrication of GdSi2 film by low-energy ion-beam implantation.journal of crystal growth,262(1-4),186-190.
MLA	Li YL,et al."Fabrication of GdSi2 film by low-energy ion-beam implantation".journal of crystal growth 262.1-4(2004):186-190.