Mn implanted GaAs by low energy ion beam deposition

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	Mn implanted GaAs by low energy ion beam deposition
	Yin ZG
刊名	journal of crystal growth
	2004
卷号	264 期号:1-3 页码:31-35
关键词	X-ray diffraction
ISSN号	0022-0248
通讯作者	song, sl, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. 电子邮箱地址: slsong@red.semi.ac.cn
中文摘要	high dose mn was implanted into semi-insulating gaas substrate to fabricate embedded ferromagnetic mn-ga binary particles by mass-analyzed dual ion beam deposit system at room temperature. the properties of as-implanted and annealed samples were measured with x-ray diffraction, high-resolution x-ray diffraction to characterize the structural changes. new phase formed after high temperature annealing. sample surface image was observed with atomic force microscopy. all the samples showed ferromagnetic behaviour at room temperature. there were some differences between the hysteresis loops of as-implanted and annealed samples as well as the cluster size of the latter was much larger than that of the former through the surface morphology. (c) 2004 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8136]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yin ZG. Mn implanted GaAs by low energy ion beam deposition[J]. journal of crystal growth,2004,264(1-3):31-35.
APA	Yin ZG.(2004).Mn implanted GaAs by low energy ion beam deposition.journal of crystal growth,264(1-3),31-35.
MLA	Yin ZG."Mn implanted GaAs by low energy ion beam deposition".journal of crystal growth 264.1-3(2004):31-35.