Photoluminescence of Er-doped hydrogenated amorphous silicon nitride

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	Photoluminescence of Er-doped hydrogenated amorphous silicon nitride
	Zhao, Q ; Yan, H ; Kumeda, A ; Shimizu, T
刊名	applied surface science
	2004
卷号	227 期号:1-4 页码:306-311
关键词	Er-doped
ISSN号	0169-4332
通讯作者	zhao, q, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china. 电子邮箱地址: qzhao@red.semi.ac.cn
中文摘要	er photoluminescence (er pl) and dangling bonds (dbs) of annealed er-doped hydrogenated amorphous silicon nitride (a-sin:h(er)) with various concentrations of nitrogen are studied in the temperature range 62-300 k. post-annealing process is employed to change the dbs density of a-sin:h(er). pl spectra, dbs density and h, n concentrations are measured. the intensity of er pl displays complicated relation with si dbs density within the annealing temperature range 200-500 degreesc. the intensity of er pl first increases with decreasing density of si dangling bonds owing to the structural relaxation up to 250 degreesc, and continues to increase up to 350 degreesc even though the density of si dbs increases due to the improvement of symmetry environment of er3+. (c) 2003 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8114]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhao, Q,Yan, H,Kumeda, A,et al. Photoluminescence of Er-doped hydrogenated amorphous silicon nitride[J]. applied surface science,2004,227(1-4):306-311.
APA	Zhao, Q,Yan, H,Kumeda, A,&Shimizu, T.(2004).Photoluminescence of Er-doped hydrogenated amorphous silicon nitride.applied surface science,227(1-4),306-311.
MLA	Zhao, Q,et al."Photoluminescence of Er-doped hydrogenated amorphous silicon nitride".applied surface science 227.1-4(2004):306-311.