Preferred growth of nanocrystalline silicon in boron-doped nc-Si : H Films

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	Preferred growth of nanocrystalline silicon in boron-doped nc-Si : H Films
	Wei WS ; Wang TM ; Zhang CX ; Li GH ; Han HX ; Ding K
刊名	vacuum
	2004
卷号	74 期号:1 页码:69-75
关键词	hydrogenated nanocrystalline silicon film
ISSN号	0042-207x
通讯作者	wei, ws, beihang univ, ctr mat phys & chem, sch sci, beijing 100083, peoples r china. 电子邮箱地址: weiwensheng287@sohu.com
中文摘要	preferred growth of nanocrystalline silicon (nc-si) was first found in boron-doped hydrogenated nanocrystalline (nc-si:h) films prepared using plasma-enhanced chemical vapor deposition system. the films were characterized by high-resolution transmission electron microscope, x-ray diffraction (xrd) spectrum and raman scattering spectrum. the results showed that the diffraction peaks in xrd spectrum were at 2theta approximate to 47degrees and the exponent of crystalline plane of nc-si in the film was (220). a considerable reason was electric field derived from dc bias made the bonds of si-si array according to a certain orient. the size and crystalline volume fraction of nc-si in boron-doped films were intensively depended on the deposited parameters: diborane (b2h6) doping ratio in silane (sih4), silane dilution ratio in hydrogen (h-2), rf power density, substrate's temperature and reactive pressure, respectively. but preferred growth of nc-si in the boron-doped nc-si:h films cannot be obtained by changing these parameters. (c) 2004 elsevier ltd. all rights reserved.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8086]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wei WS,Wang TM,Zhang CX,et al. Preferred growth of nanocrystalline silicon in boron-doped nc-Si : H Films[J]. vacuum,2004,74(1):69-75.
APA	Wei WS,Wang TM,Zhang CX,Li GH,Han HX,&Ding K.(2004).Preferred growth of nanocrystalline silicon in boron-doped nc-Si : H Films.vacuum,74(1),69-75.
MLA	Wei WS,et al."Preferred growth of nanocrystalline silicon in boron-doped nc-Si : H Films".vacuum 74.1(2004):69-75.