Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition

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	Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition
	Li DB; Han XX; Han PD
刊名	journal of crystal growth
	2004
卷号	266 期号:4 页码:423-428
关键词	nanostructure
ISSN号	0022-0248
通讯作者	han, xx, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: xxhan@red.semi.ac.cn
中文摘要	multilayer ingan/gan quantum dots (qds) were grown on sapphire substrates through a three-dimensional growth mode, which was initiated by a special passivation processing introduced into the normal growth procedure. surface morphology and photoluminescence properties of qds with different stacking periods (from one to four) were investigated. the temperature dependences of the pl peak energies were found to show a great difference between two-layer and three-layer qds. the fast redshift and the reversed sigmoidal temperature dependences of the pl energies for the former were attributed to the thermally activated carrier transfer from small to large dots. however, the increase of both the dot size and the spatial space among dots with the growing stacking periods reduced the carrier escape and retrapping. (c) 2004 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8058]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li DB,Han XX,Han PD. Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition[J]. journal of crystal growth,2004,266(4):423-428.
APA	Li DB,Han XX,&Han PD.(2004).Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition.journal of crystal growth,266(4),423-428.
MLA	Li DB,et al."Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition".journal of crystal growth 266.4(2004):423-428.