Growth mechanism of beta-SiC nanowires in SiC reticulated porous ceramics

	Growth mechanism of beta-SiC nanowires in SiC reticulated porous ceramics
	Yao XM(姚秀敏) ; Tan SH(谭寿洪) ; Huang ZR(黄政仁) ; Dong SM(董绍明) ; Jiang DL(江东亮)
刊名	ceramics international
	2007-09-01
卷号	33 期号:6 页码:901
ISSN号	0272-8842
其他题名	Growth mechanism of beta-SiC nanowires in SiC reticulated porous ceramics
通讯作者	姚秀敏
学科主题	材料科学
收录类别	SCI收录
WOS记录号	WOS:000248175000002
公开日期	2013-04-03
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/1620]
专题	上海硅酸盐研究所_结构陶瓷与复合材料工程研究中心_期刊论文
推荐引用方式 GB/T 7714	Yao XM,Tan SH,Huang ZR,et al. Growth mechanism of beta-SiC nanowires in SiC reticulated porous ceramics[J]. ceramics international,2007,33(6):901.
APA	姚秀敏,谭寿洪,黄政仁,董绍明,&江东亮.(2007).Growth mechanism of beta-SiC nanowires in SiC reticulated porous ceramics.ceramics international,33(6),901.
MLA	姚秀敏,et al."Growth mechanism of beta-SiC nanowires in SiC reticulated porous ceramics".ceramics international 33.6(2007):901.