Quantum mechanical simulation of nanosized metal-oxide-semiconductor field-effect transistor using empirical pseudopotentials: A comparison for charge density occupation methods

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	Quantum mechanical simulation of nanosized metal-oxide-semiconductor field-effect transistor using empirical pseudopotentials: A comparison for charge density occupation methods
	Jiang XW (Jiang Xiang-Wei) ; Deng HX (Deng Hui-Xiong) ; Li SS (Li Shu-Shen) ; Luo JW (Luo Jun-Wei) ; Wang LW (Wang Lin-Wang)
刊名	journal of applied physics
	2009
卷号	106 期号:8 页码:art.no.084510
关键词	ELECTRONIC-STRUCTURE
ISSN号	0021-8979
通讯作者	jiang, xw, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: xwjiang@semi.ac.cn
中文摘要	the atomistic pseudopotential quantum mechanical calculations are used to study the transport in million atom nanosized metal-oxide-semiconductor field-effect transistors. in the charge self-consistent calculation, the quantum mechanical eigenstates of closed systems instead of scattering states of open systems are calculated. the question of how to use these eigenstates to simulate a nonequilibrium system, and how to calculate the electric currents, is addressed. two methods to occupy the electron eigenstates to yield the charge density in a nonequilibrium condition are tested and compared. one is a partition method and another is a quasi-fermi level method. two methods are also used to evaluate the current: one uses the ballistic and tunneling current approximation, another uses the drift-diffusion method. (c) 2009 american institute of physics. [doi:10.1063/1.3248262]
学科主题	半导体物理
收录类别	SCI
资助信息	national basic research program of china g2009cb929300 national natural science foundation of china 60821061 60776061u.s. department of energy bes, office of science de-ac02-05ch11231
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7555]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jiang XW ,Deng HX ,Li SS ,et al. Quantum mechanical simulation of nanosized metal-oxide-semiconductor field-effect transistor using empirical pseudopotentials: A comparison for charge density occupation methods[J]. journal of applied physics,2009,106(8):art.no.084510.
APA	Jiang XW ,Deng HX ,Li SS ,Luo JW ,&Wang LW .(2009).Quantum mechanical simulation of nanosized metal-oxide-semiconductor field-effect transistor using empirical pseudopotentials: A comparison for charge density occupation methods.journal of applied physics,106(8),art.no.084510.
MLA	Jiang XW ,et al."Quantum mechanical simulation of nanosized metal-oxide-semiconductor field-effect transistor using empirical pseudopotentials: A comparison for charge density occupation methods".journal of applied physics 106.8(2009):art.no.084510.