Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector

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	Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector
	Zhang S (Zhang Shuang) ; Zhao DG (Zhao De-Gang) ; Liu ZS (Liu Zong-Shun) ; Zhu JJ (Zhu Jian-Jun) ; Zhang SM (Zhang Shu-Ming) ; Wang YT (Wang Yu-Tian) ; Duan LH (Duan Li-Hong) ; Liu WB (Liu Wen-Bao) ; Jiang DS (Jiang De-Sheng) ; Yang H (Yang Hui)
刊名	acta physica sinica
	2009
卷号	58 期号:11 页码:7952-7957
关键词	GaN
ISSN号	1000-3290
通讯作者	zhao, dg, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: dgzhao@red.semi.ac.cn
中文摘要	the leakage mechanism of gan-based p-i-n (p-algan/i-gan/n-gan) uv detector has been investigated. with the same dislocation density, devices made from material with higher density of v-pits on surface produce larger leakage current. sem images show that some v-pits penetrate into i-gan layer, sometimes even the n-gan layer. if p-ohmic contact metal (ni/au) deposits in the v-pits, schottky contact would be formed at the interface of metal and i-gan, or form ohmic contact at the interface of metal and n-gan. the existence of parallel schottky junction and ohmic contact resistance enhances the leakage current greatly.
学科主题	半导体物理
收录类别	SCI
资助信息	national natural science foundation of china 60776047 60506001604760216057600360836003project supported by the national natural science foundation of china (grant nos. 60776047, 60506001, 60476021, 60576003, 60836003).
语种	中文
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7533]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang S ,Zhao DG ,Liu ZS ,et al. Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector[J]. acta physica sinica,2009,58(11):7952-7957.
APA	Zhang S .,Zhao DG .,Liu ZS .,Zhu JJ .,Zhang SM .,...&Yang H .(2009).Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector.acta physica sinica,58(11),7952-7957.
MLA	Zhang S ,et al."Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector".acta physica sinica 58.11(2009):7952-7957.