Determination of the tilt and twist angles of curved GaN layers by high-resolution x-ray diffraction

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	Determination of the tilt and twist angles of curved GaN layers by high-resolution x-ray diffraction
	Liu, JQ (Liu, J. Q.) ; Wang, JF (Wang, J. F.) ; Qiu, YX (Qiu, Y. X.) ; Guo, X (Guo, X.) ; Huang, K (Huang, K.) ; Zhang, YM (Zhang, Y. M.) ; Hu, XJ (Hu, X. J.) ; Xu, Y (Xu, Y.) ; Xu, K (Xu, K.) ; Huang, XH (Huang, X. H.) ; Yang, H (Yang, H.)
刊名	semiconductor science and technology
	2009
卷号	24 期号:12 页码:art.no.125007
关键词	THIN-FILMS
ISSN号	0268-1242
通讯作者	xu, k, chinese acad sci, suzhou inst nanotech & nanobion, suzhou 215125, peoples r china. 电子邮箱地址: kxu2006@sinano.ac.cn
中文摘要	the full-width at half-maximum (fwhm) of an x-ray rocking curve (xrc) has been used as a parameter to determine the tilt and twist angles of gan layers. nevertheless, when the thickness of gan epilayer reaches several microns, the peak broadening due to curvature becomes non-negligible. in this paper, using the (0 0 l), l = 2, 4, 6, xrc to minimize the effects of wafer curvature was studied systematically. also the method to determine the tilt angle of a curved gan layer was proposed while the williamson-hall plot was unsuitable. it was found that the (0 0 6) xrc-fwhm had a significant advantage for high-quality gan layers with the radius curvature of r less than 3.5 m. furthermore, an extrapolating method of gaining a reliable tilt angle has also been proposed, with which the calculated error can be improved by 10% for r < 2 m crystals compared with the (0 0 6) xrc-fwhm. in skew geometry, we have demonstrated that the twist angles deriving from the (2 0 4) xrc-fwhm are in accord with those from the grazing incidence in-plane diffraction (ip-gid) method for significantly curved samples.
学科主题	光电子学
收录类别	SCI
资助信息	national natural science foundation of china 60776003 10704052national basic research program of china 2007cb936700
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7509]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liu, JQ ,Wang, JF ,Qiu, YX ,et al. Determination of the tilt and twist angles of curved GaN layers by high-resolution x-ray diffraction[J]. semiconductor science and technology,2009,24(12):art.no.125007.
APA	Liu, JQ .,Wang, JF .,Qiu, YX .,Guo, X .,Huang, K .,...&Yang, H .(2009).Determination of the tilt and twist angles of curved GaN layers by high-resolution x-ray diffraction.semiconductor science and technology,24(12),art.no.125007.
MLA	Liu, JQ ,et al."Determination of the tilt and twist angles of curved GaN layers by high-resolution x-ray diffraction".semiconductor science and technology 24.12(2009):art.no.125007.