First principle study of Mg, Si and Mn co-doped GaN

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	First principle study of Mg, Si and Mn co-doped GaN
	Zhao DG
刊名	acta physica sinica
	2009
卷号	58 期号:1 页码:450-458
关键词	Mg Si and Mn co-doped GaN electronic structure T-C optical properties
ISSN号	1000-3290
通讯作者	fan gh s china normal univ inst optoelect mat & technol guangzhou 510631 guangdong peoples r china. e-mail address: hy.xing@yahoo.com.cn ; gfan@scnu.edu.cn
中文摘要	calculations of electronic structures and optical properties of mg (or si) and mn co-doped gan were carried out by means of first-principle plane-wave pesudopotential (pwp) based on density functional theory - the spin polarized impurity bands of deep energy levels were found for both systems. they are half metallic and suitable for spin injectors. compared with gan mn, gan mn-mg exhibits a significant increase in t-c 1 while the 1.3 ev absorption peak in gan mn disappears due to addition of mg. in addition, a strong absorption peak due to t-4(1) (f) -> t-4(2) (f) transition of mn4+ were observed near 1.1 ev. nevertheless, gan mn-si failed to show increase of t-c, and the absorption peak was not observed at the low energy side.
学科主题	半导体物理
收录类别	SCI
资助信息	national natural science foundation of china 50602018 natural science foundation of guangdong province, chin 06025083 research project of science and technology of guangdong province, china 2006a10802001 key research project of science and technology of guangzhou, guangdong province, china 2005z12d0071 crucial field and key breakthrough project of guangdong province and hongkong, china 207a010501008 project supported by the national natural science foundation of china (grant no. 50602018), the natural science foundation of guangdong province, china (grant no. 06025083), the research project of science and technology of guangdong province, china( grant no. 2006a10802001), the key research project of science and technology of guangzhou, guangdong province, china ( grant no. 2005z12d0071) the crucial field and key breakthrough project of guangdong province and hongkong, china (207a010501008).
语种	中文
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7393]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhao DG. First principle study of Mg, Si and Mn co-doped GaN[J]. acta physica sinica,2009,58(1):450-458.
APA	Zhao DG.(2009).First principle study of Mg, Si and Mn co-doped GaN.acta physica sinica,58(1),450-458.
MLA	Zhao DG."First principle study of Mg, Si and Mn co-doped GaN".acta physica sinica 58.1(2009):450-458.